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Structural characterization of as-grown and quasi-free standing graphene layers on SiC

By R. Bueno and others
We report on a comparative structural characterization of two types of high quality epitaxial graphene layers grown by CVD on 4H-SiC(0001). The layers under study are a single layer graphene on top of a buffer layer and a quasi-free-standing graphene obtained by intercalation of hydrogen underneath the buffer layer. We... Show more
April 10, 2019
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Structural characterization of as-grown and quasi-free standing graphene layers on SiC
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