Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 \mum thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 \cdot 10^{15} neq/cm^2. Pulsed red laser light with a wavelength of 672 nm is... Show more