Theory and design of In_{x}Ga_{1-x}As_{1-y}Bi_{y} mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates

We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In_{x}Ga_{1-x}As_{1-y}Bi_{y}, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure... Show more