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Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics

By Christine Gonsalves and others at
LogoAalto University
Atomic layer deposition (ALD) is exceptionally suitable for coating complex three-dimensional structures with conformal thin films. Studies of ALD conformality in high-aspect-ratio (HAR) features typically assume free molecular flow conditions with Knudsen diffusion. However, the free molecular flow assumption might not be valid for real ALD processes. This work maps... Show more
October 1, 2024
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Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics
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