Random alloy fluctuations and structural inhomogeneities in c-plane In_{x}Ga_{1-x}N quantum wells: theory of ground and excited electron and hole states

We present a detailed theoretical analysis of the electronic structure of c-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an atomistic tight-binding model, accounting for variations in strain and built-in field due to random... Show more