Positive and negative chemical pressure effects investigated in electron-doped FeSe films with an electric-double-layer structure

We investigated chemical pressure effects in electron-doped (e-doped) FeSe by fabricating an electric-double-layer structure with single crystalline FeSe films on LaAlO_3 with Se substituted by isovalent Te and S. Our method enables transport measurements of e-doped FeSe. Electron doping by applying gate voltage of 5 V increases T_{\mathrm c} of... Show more