Optical properties of metamorphic type-I InAs_{1-x}Sb_{x}/Al_{y}In_{1-y}As quantum wells grown on GaAs for the mid-infrared spectral range

We analyse the optical properties of InAs_{1-x}Sb_{x}/Al_{y}In_{1-y}As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al_{y}In_{1-y}As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al_{y}In_{1-y}As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 \mum. Photoluminescence (PL) measurements... Show more