Sign in

Mobile Intrinsic Point Defects for Conductive Neutral Domain Walls in LiNbO3

By Kristoffer Eggestad and others at
LogoNorwegian University of Science and Technology
Conductive ferroelectric domain walls (DWs) hold great promise for neuromorphic nanoelectronics as they can contribute to realize multi-level diodes and nanoscale memristors. Point defects accumulating at DWs will change the local electrical transport properties. Hence, local, inter-switchable n- and p-type conductivity at DWs can be achieved through point defect population... Show more
July 5, 2024
=
0
Loading PDF…
Loading full text...
Similar articles
Loading recommendations...
=
0
x1
Mobile Intrinsic Point Defects for Conductive Neutral Domain Walls in LiNbO3
Click on play to start listening