Interface roughness, carrier localization and wave function overlap in c-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

In this work we present a detailed analysis of the interplay of Coulomb effects and different mechanisms that can lead to carrier localization effects in c-plane InGaN/GaN quantum wells. As mechanisms for carrier localization we consider here effects introduced by random alloy fluctuations as well as structural inhomogeneities such as... Show more