Epitaxial growth of FeSe_{0.5}Te_{0.5} thin films on CaF_2 substrates with high critical current density

In-situ epitaxial growth of FeSe_{0.5}Te_{0.5} thin films is demonstrated on a non-oxide substrate CaF_2. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe_{0.5}Te_{0.5}, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at T =... Show more