Electronic structure evolution in dilute carbide Ge_{1-x}C_{x} alloys and implications for device applications

We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge_{1-x}C_{x}. For ordered alloy supercells, we demonstrate that C incorporation strongly perturbs the conduction band (CB) structure by driving hybridisation of A_{1}-symmetric linear combinations of Ge states lying close in energy to the CB... Show more