Derivation of 12- and 14-band \textbf{k}\cdot\textbf{p} Hamiltonians for dilute bismide and bismide-nitride semiconductors

Using an sp^{3}s^{*} tight-binding model we demonstrate how the observed strong bowing of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide alloy GaBi_{x}As_{1-x} can be described in terms of a band-anticrossing interaction between the extended states of the GaAs valence band edge and highly localised... Show more