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Coulomb explosion sputtering of selectively oxidized Si

By Pratyush Karmakar and others
We have studied multiply charged Arq+ ion induced potential sputtering of a unique system comprising of coexisting Silicon and Silicon oxide surfaces. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), where ripple structures are formed and one side of each ripple gets more oxidized. It is... Show more
November 20, 2009
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Coulomb explosion sputtering of selectively oxidized Si
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