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A Compensated Design of the LGAD Gain Layer

By Valentina Sola and others
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p+^+ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting \sim 5E16/cm3^3 atoms of an acceptor material, typically Boron or Gallium,... Show more
September 1, 2022
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A Compensated Design of the LGAD Gain Layer
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